IXTK600N04T2
IXTX600N04T2
90
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
100
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
80
70
60
R G = 1 ? , V GS = 10V
V DS = 20V
90
80
70
R G = 1 ? , V GS = 10V
V DS = 20V
T J = 125oC
50
I
D
= 200A
60
50
40
30
20
I
D
= 100A
40
30
20
T J = 25oC
10
0
10
0
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
120
140
160
180
200
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
600
140
400
160
500
400
300
200
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 20V
I D = 200A
I D = 100A
120
100
80
60
350
300
250
200
150
t f t d(off) - - - -
R G = 1 ? , V GS = 10V
V DS = 20V
I D = 100A
I D = 200A
150
140
130
120
110
100
100
100
40
50
90
0
1
2
3
4
5
6
7
8
9
10
20
0
25
35
45
55
65
75
85
95
105
115
80
125
R G - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
400
200
800
800
350
300
t f t d(off) - - - -
R G = 1 ? , V GS = 10V
V DS = 20V
180
160
700
600
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 20V
I D = 200A, 100A
700
600
250
200
140
120
500
400
500
400
T J = 125oC, 25oC
150
100
50
0
100
80
60
40
300
200
100
0
300
200
100
0
40
60
80
100
120
140
160
180
200
1
2
3
4
5
6
7
8
9
10
I D - Amperes
? 2009 IXYS CORPORATION, All Rights Reserved
R G - Ohms
相关PDF资料
IXTK60N50L2 MOSFET N-CH 60A 500V TO-264
IXTK62N25 MOSFET N-CH 250V 62A TO-264
IXTK75N30 MOSFET N-CH 300V 75A TO-264
IXTK80N25 MOSFET N-CH 250V 80A TO-264
IXTK82N25P MOSFET N-CH 250V 82A TO-264
IXTK8N150L MOSFET N-CH 1500V 8A TO-264
IXTK90N15 MOSFET N-CH 150V 90A TO-264
IXTL2X180N10T MOSFET N-CH 100V ISOPLUS I5-PAK
相关代理商/技术参数
IXTK60N50L2 功能描述:MOSFET 60 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK62N25 功能描述:MOSFET 62 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK74N20 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Current MegaMOSFET
IXTK75N30 功能描述:MOSFET 75 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK80N25 功能描述:MOSFET 80 Amps 250V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK82N25P 功能描述:MOSFET 82 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK88N30P 功能描述:MOSFET 88 Amps 300V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK8N150L 功能描述:MOSFET 8 Amps 1500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube